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US 9,431,515 B2Granted
Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-Jun Won, Weon-Hong Kim, Moon-Kyun Song
Life of this patent
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Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming an interlayer insulating layer comprising a trench therein on a substrate;
- forming an interface layer in the trench;
- forming a high-k layer in the trench,
- wherein the high-k layer is on the interface layer and extends on a sidewall of the trench;
- forming a first metal layer on the high-k layer,
- wherein the first metal layer extends on the sidewall of the trench, and
- wherein the first metal layer comprises an oxidized portion;
- performing a first heat treatment with respect to the high-k layer and the first metal layer at a first temperature when a surface of the first metal layer is exposed,
- wherein the first heat treatment reduces oxygen in the oxidized portion of the first metal layer;
- performing a second heat treatment using a peak second temperature that is higher than the first temperature with respect to the high-k layer when the surface of the first metal layer is exposed,
- wherein the second heat treatment diffuses oxygen from the first metal layer into the high-k layer;
- forming a second metal layer on the first metal layer;
- and
- forming a gate electrode structure on the second metal layer.
11 more elements
A method for fabricating a semiconductor device, the method comprising:
- providing a substrate that comprises a first region and a second region;
- forming an interlayer insulating layer that comprises a first trench and a second trench on the first region and the second region, respectively;
- forming a high-k layer in the first trench and the second trench;
- forming a first metal layer on the high-k layer,
- wherein the first metal layer comprises a first segment in the first region and a second segment in the second region, and
- wherein the first metal layer comprises an oxidized portion;
- performing a first heat treatment with respect to the high-k layer at a first temperature when a surface of the first metal layer is exposed,
- wherein the first heat treatment reduces oxygen in the oxidized portion of the first metal layer;
- performing a second heat treatment using a peak second temperature that is higher than the first temperature with respect to the high-k layer when the surface of the first metal layer is exposed,
- wherein the second heat treatment diffuses oxygen from the first metal layer into the high-k layer;
- forming a second metal layer on the first metal layer;
- and
- removing the second metal layer from the first segment of the first metal layer in the first region while at least a portion of the second metal layer remains on the second segment of the first metal layer in the second region.
10 more elements
A method of forming a semiconductor device, the method comprising:
- forming an interface layer in a trench in an insulating layer;
- forming a high-k layer on the interface layer in the trench;
- forming a metal layer on the high-k layer in the trench,
- wherein the metal layer extends on a sidewall of the trench, and
- wherein the metal layer comprises an oxidized portion;
- performing a first heat treatment using a first temperature, after forming the metal layer on the high-k layer in the trench,
- wherein the first heat treatment reduces oxygen in the oxidized portion of the metal layer;
- and
- performing a second heat treatment using a second temperature that is higher than the first temperature of the first heat treatment, after performing the first heat treatment,
- wherein the second heat treatment diffuses oxygen from the metal layer into the high-k layer.
7 more elements
Dependencies are inferred from the claim text.