FinFET device having a high germanium content fin structure and method of making same
AssigneesSTMicroelectronics S.r.l., International Business Machines Corporation
InventorsQing Liu, Bruce Doris, Gauri Karve
Life of this patent
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Abstract
A fin of silicon-germanium material is formed and covered with an epitaxially grown layer of silicon material. A dummy transistor gate is then formed to extend over a channel of the fin. Sidewall spacers are formed on each side of the dummy transistor gate and directly on top of the expitaxial silicon layer. Epitaxially grown raised source and drain regions are formed on each side of the dummy transistor gate adjacent the sidewall spacers. The dummy transistor gate and a portion of the epitaxial silicon layer (underneath said dummy transistor gate) are removed and replaced by a metal gate.
Claims21
A method for manufacturing a FinFET transistor, comprising:
- forming a fin of silicon-germanium semiconductor material;
- forming a layer of silicon material on surfaces of said fin;
- forming a transistor gate structure that extends over a channel region of said fin;
- forming sidewall spacers on each side of the transistor gate structure, wherein a bottom of each sidewall spacer is separated from a top surface of said fin by said layer of silicon material;
- forming recessed regions at a top of the fin adjacent the channel region on each side of the transistor gate electrode;
- and
- epitaxially growing epitaxial growth material from said fin to fill the recessed regions and form raised source and drain regions.
A method, comprising:
- forming a first fin of first semiconductor material and a second fin of second semiconductor material that is different from the first semiconductor material;
- covering said first fin with a mask having an opening exposing said second fin;
- epitaxially growing a layer of silicon material on exposed surfaces of said second fin;
- forming a dummy transistor gate that extends over a channel region of said second fin;
- forming sidewall spacers on each side of the dummy transistor gate and directly on top of said layer of silicon material;
- removing portions of said layer of silicon material on each side of the dummy transistor gate adjacent the sidewall spacers;
- forming recessed regions in a top surface of the fin where the portions of said layer of silicon material were removed;
- epitaxially growing raised source and drain regions in said recessed regions;
- removing the dummy transistor gate;
- removing another portion of said layer of silicon material underneath said dummy transistor gate;
- and
- installing a replacement metal gate between the sidewall spacers.
A method, comprising:
- forming a fin of silicon-germanium material;
- epitaxially growing a layer of silicon material on surfaces of said fin;
- forming a dummy transistor gate to extend over a channel region of said fin;
- forming sidewall spacers on each side of the dummy transistor gate, said sidewall spacers is direct contact with a top of the layer of silicon material;
- epitaxially growing raised source and drain regions from said fin on each side of the dummy transistor gate adjacent the sidewall spacers;
- removing the dummy transistor gate and a portion of the epitaxial silicon layer underneath said dummy transistor gate;
- and
- installing a replacement metal gate between the sidewall spacers.
A method, comprising:
- forming a fin of silicon-germanium material;
- epitaxially growing a layer of silicon material on surfaces of the fin;
- forming a dummy transistor gate structure to extend over a channel region of the fin, the dummy transistor gate structure including a dummy gate;
- forming a gate electrode recess by removing the dummy gate and a portion of the epitaxial layer of silicon material underneath the dummy gate;
- and
- installing a replacement metal gate structure over the channel region of the fin in the gate electrode recess.
Dependencies are inferred from the claim text.