Dummy gate structure and methods thereof

A semiconductor structure, comprising:

• a first active region including a first device having a first source region, a first drain region, and a first gate, wherein the first source region and the first drain region are disposed adjacent to and on either side of the first gate;
• a second active region including a second device having a second source region, a second drain region, and a second gate, wherein the second source region and the second drain region are disposed adjacent to and on either side of the second gate;
• an isolation region interposed between and adjacent to each of the first and second active regions and a dummy gate formed over the isolation region;
• and
• an input/output (I/O) device including an I/O gate stack formed within an I/O region of the semiconductor structure;
• wherein one of the first source region and the first drain region is disposed adjacent to a first side of the isolation region, and wherein one of the second source region and the second drain region is disposed adjacent to a second side of the isolation region;
• and
• wherein the first and second gates include a first dielectric layer having a first thickness, and wherein the dummy gate and the I/O gate stack include a second dielectric layer having a second thickness greater than the first thickness.

A semiconductor device, comprising:

• an isolation region adjacent to a first active region;
• a first source/drain region and a first gate formed within the first active region, the first source/drain region disposed adjacent to a first side of the isolation region;
• and
• a second gate formed at least partially over the isolation region and adjacent to the first source/drain region;
• wherein the first gate includes a first dielectric layer having a first thickness, and wherein the second gate includes a second dielectric layer having a second thickness greater than the first thickness.