Method of making a gate structure

A method of making a transistor, the method comprising:

• lining an opening in an insulating layer with a gate dielectric, wherein the gate dielectric defines a trench;
• depositing a first metal material into the trench, wherein the first metal material fills a bottom portion of the trench, the first metal material has a first resistance, and depositing the first metal material defines a first recess;
• depositing a barrier layer over the first metal material, wherein depositing the barrier layer comprises partially filling the first recess and defining a second recess;
• and
• filling the second recess and an entire width of the trench above the barrier layer with a homogeneous second metal material and having a second resistance less than the first resistance, wherein a maximum width of the homogeneous second metal material is equal to a maximum width of the barrier layer, and a top surface of the gate dielectric is co-planar with a top surface of the homogeneous second metal material.

A method of making a transistor, the method comprising:

• lining an opening in an insulating layer with a gate dielectric, wherein the gate dielectric defines a trench;
• depositing a first metal material into the trench, wherein the first metal material fills a bottom portion of the trench, the first metal material has a first resistance, and depositing the first metal material defines a recess;
• and
• filling the recess and an entire width of the trench above the first metal material with a homogeneous second metal material and having a second resistance less than the first resistance, wherein a maximum width of the homogeneous second metal material is equal to a maximum width of the first metal material, and a top surface of the gate dielectric is co-planar with a top surface of the homogeneous second metal material.