Method for producing semiconductor device and semiconductor device

A semiconductor device comprising:

• a third first-conductivity-type semiconductor layer formed on a semiconductor substrate;
• a first pillar-shaped semiconductor layer formed on the semiconductor substrate, the first pillar-shaped semiconductor layer including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer formed from a substrate side in that order;
• a first gate insulating film formed around the first body region;
• a first gate formed around the first gate insulating film;
• a second gate insulating film formed around the second body region;
• a second gate formed around the second gate insulating film;
• an output terminal made of a semiconductor and connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer;
• and
• a first contact that connects the first gate and the second gate,
• wherein the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer are further formed in the output terminal.