Power semiconductor device and method

A power semiconductor device, comprising:

• a semiconductor body having a first side, a second side opposite the first side and an outer rim, the semiconductor body comprising an active region and an edge termination region arranged between the active region and the outer rim, the semiconductor body further comprising:
• a first doping region in the active region and connected to a first electrode arranged on the first side of the semiconductor body;
• a second doping region in the active region and the edge termination and connected to a second electrode arranged on the second side of the semiconductor body,
• a drift region between the first doping region and the second doping region;
• and
• an insulating region, arranged in the edge termination region, and at least partially within the second doping region, the insulating region forming a blocking region in the edge termination region to at least partially block a vertical transit of charge carriers
• wherein the second side extends along a single plane in both the active region and the edge termination region, and wherein the insulating region is separated from the drift region by the second doped region.