β-Ga2O3-based single crystal substrate
AssigneesTamura Corporation, Koha Co., Ltd.
InventorsKimiyoshi Koshi, Shinya Watanabe, Masaru Takizawa, Yu Yamaoka, Makoto Watanabe, Takekazu Masui
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Abstract
A β-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm−2. The average dislocation density may be not more than 6.14×104 cm−2. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
Claims8
A β-Ga2O3-based single crystal substrate including a main surface parallel to a b-axis, the β-Ga2O3-based single crystal substrate comprising:
- an average dislocation density on the main surface of not less than 7.52×103 cm−2 and less than 7.31×104 cm−2,
- wherein the substrate is free from any twinned crystal, and
- wherein the substrate has a diameter of not less than 2 inches.
A β-Ga2O3-based single crystal substrate including a main surface parallel to a b-axis, the β-Ga2O3-based single crystal substrate comprising:
- an average dislocation density on the main surface of not less than 7.52×103 cm−2 and less than 6.14×104 cm−2,
- wherein the substrate further comprises a region free from any twinning plane, and
- wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and the main surface.
A β-Ga2O3-based single crystal substrate including a main surface parallel to a b-axis, the β-Ga2O3-based single crystal substrate comprising:
- an average dislocation density on the main surface of not less than 6.14×104 cm−2 and less than 7.31×104 cm−2,
- wherein the substrate further comprises a region free from any twinning plane, and
- wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface.
Dependencies are inferred from the claim text.