Composite substrate of gallium nitride and metal oxide
AssigneesSixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
InventorTadao Hashimoto
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Abstract
The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
Claims23
A method comprising:
- a. forming a protective metal oxide layer upon a face of a group III-nitride wafer prior to loading the wafer in a device fabrication reactor,
- i. wherein the group III-nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and
- ii. wherein
- 1. the protective metal oxide layer is capable of being etched by a chemical in the device fabrication reactor,
- 2. the protective metal oxide layer is sufficiently thick to protect the face from mechanical, physical and/or chemical damage during storage, transport and/or handling of the wafer, and
- 3. the protective metal oxide layer is sufficiently thin to be removed in the device fabrication reactor, and
- b. storing said wafer.
A method comprising comprising:
- a. forming a protective metal oxide layer upon a face of a group III-nitride wafer prior to loading the wafer in a device fabrication reactor,
- i. wherein the group III-nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and
- ii. wherein
- 1.the protective metal oxide layer is capable of being etched by a chemical in the device fabrication reactor,
- 2.the protective metal oxide layer is sufficiently thick to protect the face from mechanical, physical and/or chemical damage during storage, transport and/or handling of the wafer, and
- 3. the protective metal oxide layer is sufficiently thin to be removed in the device fabrication reactor, and
- b. removing the protective metal oxide layer in the device fabrication reactor prior to forming the device.
Dependencies are inferred from the claim text.