Graphene layer transfer

A semiconductor structure comprising:

• a receiver substrate;
• a dielectric oxide layer located directly on an entirety of an uppermost surface of said receiver substrate;
• an oxide bonding enhancement dielectric layer located directly on an entirety of an uppermost surface of said dielectric oxide layer, wherein said oxide bonding enhancement dielectric layer comprises a silsesquioxane;
• and
• graphene-containing device located atop the oxide bonding enhancement dielectric layer, wherein said graphene-containing device includes at least a layer of graphene that serves as a channel of a field effect transistor and has a bottommost surface in direct contact with an entirety of an uppermost surface of the oxide bonding enhancement dielectric layer, and wherein said oxide bonding enhancement dielectric layer has outermost sidewall edges that are vertically coincident to outer sidewall edges of said oxide dielectric layer and an oxide to oxide bonding interface is present between said dielectric oxide layer and said oxide bonding enhancement dielectric layer.

A semiconductor structure comprising:

• a receiver substrate;
• a dielectric oxide layer located directly on an entirety of an uppermost surface of said receiver substrate;
• an oxide bonding enhancement dielectric layer located directly on an entirety of an uppermost surface of said dielectric oxide, wherein said oxide bonding enhancement dielectric layer comprises a silsesquioxane;
• and
• a graphene-containing device located atop the oxide bonding enhancement dielectric layer, wherein said graphene-containing device includes at least a layer of graphene having a bottommost surface in direct contact with an uppermost surface of the oxide bonding enhancement dielectric layer, and wherein said oxide bonding enhancement dielectric layer has outermost sidewall edges that are vertically coincident to outer sidewall edges of said oxide dielectric layer.