Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices
AssigneeInternational Business Machines Corporation
InventorsInjo Ok, Balasubramanian Pranatharthiharan, Soon-cheon Seo, Charan Veera Venkata Satya Surisetty
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Abstract
A multi-gate finFET structure and formation thereof. The multi-gate finFET structure has a first gate structure that includes an inner side and an outer side. Adjacent to the first gate structure is a second gate structure. The inner side of the first gate structure faces, at least in part, the second gate structure. A stress-inducing material fills a fin cut trench that is adjacent to the outer side of the first gate structure. An epitaxial semiconductor layer fills, at least in part, an area between the first gate structure and the second gate structure.
Claims20
A multi-gate finFET structure comprising:
- a first gate structure, wherein the first gate structure includes an inner side and an outer side;
- a second gate structure that is adjacent to the first gate structure such that the inner side of the first gate structure faces, at least in part, the second gate structure;
- a stress-inducing material that fills a fin cut trench that is adjacent to the outer side of the first gate structure;
- and
- an epitaxial semiconductor layer, wherein the epitaxial semiconductor layer fills, at least in part, an area between the first gate structure and the second gate structure.
A method of forming a multi-gate finFET structure comprising:
- depositing a stress-inducing material into a fin cut trench that is adjacent to an outer side of a first gate structure such that a channel, which is controlled by the first gate structure, has a first amount of strain;
- and
- growing an epitaxial semiconductor layer between the first gate structure and a second gate structure, wherein the first amount of strain is increased to a second amount of strain as a result of the growth of the epitaxial semiconductor layer.
Dependencies are inferred from the claim text.