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US 9,431,485 B2Granted
Formation of finFET junction
AssigneeGlobalfoundries Inc.
InventorsShafaat Ahmed, Murshed M. Chowdhury, Aritra Dasgupta, Mohammad Hasanuzzaman, Shahrukh Akbar Khan, Joyeeta Nag
Life of this patent
Estimating the term…
Abstract
A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.
Claims16
A method for forming a finFET comprising:
- forming a dummy gate over a fin in a gate region of the finFET, wherein the dummy gate comprises a dummy dielectric layer in direct contact with the fin and a dummy material above the dummy dielectric layer;
- forming a gate spacer pair over the fin sandwiching the dummy gate, wherein the gate spacer pair is located above the fin in an intermediate region of the finFET, and wherein the intermediate region of the finFET is adjacent to the gate region of the finFET;
- forming a dummy spacer pair adjacent to the gate spacer pair, wherein the dummy spacer pair sandwiches the dummy gate and the gate spacer pair, and wherein the dummy spacer pair is located above the fin in the intermediate region of the finFET;
- forming an epi-layer above the fin in a source/drain region of the finFET, wherein the epi-layer is in direct contact with the dummy spacer pair and the source/drain region is adjacent to the intermediate region of the finFET;
- removing at least the dummy material to form a gate void;
- forming a replacement gate in the gate void, wherein forming the replacement gate comprises depositing a dielectric layer in the gate void and then depositing an electrode in the gate void;
- removing the dummy spacer pair after forming the replacement gate to form an implantation void;
- implanting at least one dopant through the implantation void and into the fin located in the intermediate region of the finFET;
- filling the implantation void with an insulating material to form an insulating layer;
- and
- activating the at least one dopant in the fin located in the intermediate region of the finFET.
8 more elements
A method for forming a finFET comprising:
- forming a fin on a semiconductor substrate, wherein a portion of the fin is located in a gate region of the finFET, a portion of the fin is located in an intermediate region of the finFET and a portion of the fin is located in a source/drain region of the finFET and wherein the intermediate region of the finFET is between the gate region of the finFET and the source/drain region of the finFET;
- forming a gate, wherein forming the gate comprises forming a gate dielectric above the portion of the fin located in the gate region of the finFET and then forming a gate electrode above the gate dielectric;
- forming a dummy spacer pair over the portion of the fin located in the intermediate region of the finFET, wherein the dummy spacer pair sandwiches the gate;
- forming an epi-layer above the portion of the fin located in the source/drain region of the finFET, wherein the epi-layer is in direct contact with the fin and the dummy spacer;
- removing the dummy spacer pair to create an implantation void;
- implanting at least one dopant through the implantation void and into the portion of the fin located in the intermediate region of the finFET;
- and
- activating the at least one dopant in portion of the fin located in the intermediate region of the finFET.
5 more elements
Dependencies are inferred from the claim text.