Vertical transistor with improved robustness

A transistor comprising:

• a semiconductor body having a first horizontal surface and an opposite second horizontal surface;
• a plurality of trenches disposed in the semiconductor body, the plurality of trenches extending parallel relative to each other in a first lateral direction of the semiconductor body;
• a plurality of gate electrodes disposed in the plurality of trenches, wherein each of the plurality of gate electrodes is disposed in a corresponding one of the trenches;
• a drift region disposed in the semiconductor body;
• source regions disposed between the plurality of trenches;
• body regions disposed between the plurality of trenches, the body regions comprising first portions disposed under the source regions and second portions extending up to the first horizontal surface, wherein the body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body, wherein a width of the first portions of the body regions is about the same as a width of the second portions of the body regions,
• wherein, in the first horizontal surface, the source regions and the second portions of the body regions are arranged alternately in the first lateral direction, wherein at least one of the second portions of the body regions is arranged between two of the source regions in the first lateral direction and at least one of the source regions is arranged between two of the second portions of the body regions in the first lateral direction,
• wherein a source electrode is electrically connected to the source regions and the second portions of the body regions in the first horizontal surface, and wherein the source electrode comprises electrode sections extending through the source regions into the first portions of the body regions.

A transistor comprising:

• a semiconductor body having a first horizontal surface and an opposite second horizontal surface;
• a plurality of trenches disposed in the semiconductor body, the plurality of trenches extending parallel relative to each other along a first lateral direction of the semiconductor body that is parallel to the first horizontal surface;
• a plurality of gate electrodes disposed in the plurality of trenches, wherein each of the plurality of gate electrodes is disposed in one of the plurality of trenches;
• a further trench disposed in the semiconductor body, the further trench extends perpendicular to the plurality of trenches;
• a connection electrode disposed in the further trench, the connection electrode electrically connecting the plurality of gate electrodes with each other;
• a drift region disposed in the semiconductor body;
• body regions arranged between the plurality of trenches;
• and
• source regions arranged between the plurality of trenches,
• wherein the body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body,
• wherein, in the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction, and
• wherein a source electrode is electrically connected to the source regions and the body regions in the first horizontal surface, wherein the source electrode comprises electrode sections extending through the source regions into the body regions.