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US 9,431,483 B1Granted
Nanowire and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsTsai-Yu Wen, Chin-Sheng Yang, Chun-Jen Chen, Tsuo-Wen Lu, Yu-Ren Wang
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Abstract
A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.
Claims11
A method of forming a nanowire, comprising:
- providing a substrate;
- etching the substrate to form at least one fin;
- forming a first epitaxial layer on an upper portion of the fin;
- forming an undercut on a middle portion the fin;
- forming a second epitaxial layer filling into the undercut;
- and
- oxidizing the fin, the first epitaxial layer and the second epitaxial layer to form a germanium-containing nanowire.
4 more elements
Dependencies are inferred from the claim text.