Semiconductor devices including capacitors and methods of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a mold layer on a substrate, the mold layer having first and second holes;
• forming a first capacitor structure in the first holes, the first capacitor structure including a first lower electrode, a first dielectric layer and a first upper electrode;
• forming a second capacitor structure in the second holes, the second capacitor structure including a second lower electrode, a second dielectric layer and a second upper electrode;
• partially etching the mold layer between the first and second capacitor structures to form an insulation pattern;
• and
• forming a plate electrode on the first and second upper electrodes to overlie the insulation pattern, an air gap being formed by the plate electrode between the first and second capacitor structures.