US 9,431,473 B2 · Hybrid transformer structure on semiconductor devices

Abstract

Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

Claims48

Dependent claims

A hybrid transformer formed within a semiconductor die having multiple layers, the hybrid transformer comprising:

a first set of windings positioned on at least a first layer of the semiconductor die, the first layer positioned above a substrate of the semiconductor die, the first set of windings includes a first port and a second port, the first set of windings arranged to operate as a first inductor;
and
a second set of windings positioned on at least a second layer of the semiconductor die, the second layer positioned above the substrate, the second set of windings includes a third port, a fourth port and a fifth port, the second set of windings arranged to operate as a second inductor and a third inductor, wherein the semiconductor die includes a third layer and a fourth layer, the first set of windings being positioned on the first layer and on the third layer, the second set of windings being positioned on the second layer and on the fourth layer, and wherein the first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

A method for manufacturing a hybrid transformer in a semiconductor die, the method comprising:

forming a first set of windings positioned on at least a first layer of the semiconductor die, the first layer positioned above a substrate of the die, the first set of windings includes a first port and a second port, the first set of windings arranged to operate as a first inductor;
and
forming a second set of windings positioned on at least a second layer of the semiconductor die, the second layer positioned above the substrate, the second set of windings includes a third port, a fourth port and a fifth port, the second set of windings arranged to operate as a second inductor and a third inductor, wherein the semiconductor die includes a third layer and a fourth layer, the first set of windings being positioned on the first layer and on the third layer, the second set of windings being positioned on the second layer and on the fourth layer, and wherein the first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

An apparatus for manufacturing a hybrid transformer in a die, the apparatus comprising:

means for manufacturing a first set of windings positioned on at least a first layer of the die, the first layer positioned above a substrate of the die, the first set of windings includes a first port and a second port, the first set of windings arranged to operate as a first inductor;
and
means for manufacturing a second set of windings positioned on at least a second layer of the die, the second layer positioned above the substrate, the second set of windings includes a third port, a fourth port and a fifth port, the second set of windings arranged to operate as a second inductor and a third inductor, wherein the die includes a third layer and a fourth layer, the first set of windings being positioned on the first layer and on the third layer, the second set of windings being positioned on the second layer and on the fourth layer, and wherein the first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

A semiconductor die comprising:

a substrate;
multiple layers comprising a first layer, a second layer, a third layer, and a fourth layer;
and
a hybrid transformer coupled to the substrate, the hybrid transformer comprising:
a first set of windings positioned on at least the first layer and the third layer of the semiconductor die, the first layer positioned above the substrate, the first set of windings includes a first port and a second port, the first set of windings arranged to operate as a first inductor;
and
a second second set of windings positioned on at least the second layer and the fourth layer of the semiconductor die, the second layer positioned above the substrate, wherein the second set of windings includes a third port, a fourth port and a fifth port, the second set of windings arranged to operate as a second inductor and a third inductor, and wherein the first set of windings and the set of windings are arranged to operate as a vertical coupling hybrid transformer.

4 more elements

Dependencies are inferred from the claim text.

Hybrid transformer structure on semiconductor devices

Life of this patent

Hybrid transformer structure on semiconductor devices

Life of this patent

Abstract

Claims48