Back to results
US 9,431,470 B2Granted
Display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Mayumi Mizukami, Toshimitsu Konuma
Life of this patent
Estimating the term…
Abstract
A display device has a plurality of pixels which are arranged on a substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter have a second color are provided. The second color is different from the first color.
Claims30
A display device comprising:
- a first transistor and a second transistor each comprising a gate electrode, a semiconductor film, a gate insulating film between the gate electrode and the semiconductor film, a source electrically connected to the semiconductor film, and a drain electrically connected to the semiconductor film;
- a capacitor, one electrode of the capacitor electrically connected to the gate electrode of the second transistor;
- a gate wiring in contact with the gate electrode of the first transistor;
- a wiring electrically connected to one of the source and the drain of the second transistor;
- an insulating film over the first transistor and the second transistor;
- and
- an electroluminescence element over the insulating film, the electroluminescence element electrically connected to the other of the source and the drain of the second transistor,
- wherein one of the source and the drain of the first transistor is electrically connected to the gate electrode of the second transistor,
- wherein the semiconductor film of each of the first transistor and the second transistor includes a LDD region,
- wherein a length of the LDD region of the first transistor is 0.5 μm to 3.5 μm,
- wherein a channel length of the first transistor is 0.2 μm to 18 μm,
- wherein the LDD region of the second transistor includes a first region and a second region,
- wherein the first region and the gate electrode of the second transistor overlap with each other,
- wherein the second region and the gate electrode of the second transistor do not overlap with each other,
- wherein a length of the first region is 0.1 μm to 3 μm,
- wherein a channel length of the second transistor is 1 μm to 50 μm,
- wherein a channel width of the second transistor is 0.5 μm to 10 μm, and
- wherein each of the first transistor and the second transistor has n-type conductivity.
15 more elements
A display device comprising:
- a first transistor and a second transistor each comprising a gate electrode, a semiconductor film, a gate insulating film between the gate electrode and the semiconductor film, a source electrically connected to the semiconductor film, and a drain electrically connected to the semiconductor film;
- a capacitor, one electrode of the capacitor electrically connected to the gate electrode of the second transistor;
- a gate wiring in contact with the gate electrode of the first transistor;
- a wiring electrically connected to one of the source and the drain of the second transistor;
- an insulating film over the first transistor and the second transistor;
- and
- an electroluminescence element over the insulating film, the electroluminescence element electrically connected to the other of the source and the drain of the second transistor,
- wherein one of the source and the drain of the first transistor is electrically connected to the gate electrode of the second transistor,
- wherein the semiconductor film of each of the first transistor and the second transistor includes a LDD region,
- wherein a length of the LDD region of the first transistor is 0.5 μm to 3.5 μm,
- wherein a channel length of the first transistor is 0.2 μm to 18 μm,
- wherein the LDD region of the second transistor includes a first region and a second region,
- wherein the first region and the gate electrode of the second transistor overlap with each other,
- wherein the second region and the gate electrode of the second transistor do not overlap with each other,
- wherein a length of the first region is 0.1 μm to 3 μm,
- wherein a channel length of the second transistor is 1 μm to 50 μm,
- wherein a channel width of the second transistor is 0.5 μm to 10 μm,
- wherein each of the first transistor and the second transistor has n-type conductivity, and
- wherein the first transistor has a double-gate structure.
16 more elements
A display device comprising:
- a first transistor and a second transistor over a first substrate, the first transistor and the second transistor each comprising a gate electrode, a semiconductor film, a gate insulating film between the gate electrode and the semiconductor film, a source electrically connected to the semiconductor film, and a drain electrically connected to the semiconductor film;
- a capacitor, one electrode of the capacitor electrically connected to the gate electrode of the second transistor;
- a gate wiring in contact with the gate electrode of the first transistor;
- a wiring electrically connected to one of the source and the drain of the second transistor;
- an insulating film over the first transistor and the second transistor;
- an electroluminescence element over the insulating film, the electroluminescence element electrically connected to the other of the source and the drain of the second transistor;
- a color filter overlapping with the electroluminescence element;
- and
- a second substrate over the color filter,
- wherein one of the source and the drain of the first transistor is electrically connected to the gate electrode of the second transistor,
- wherein the semiconductor film of each of the first transistor and the second transistor includes a LDD region,
- wherein a length of the LDD region of the first transistor is 0.5 μm to 3.5 μm,
- wherein a channel length of the first transistor is 0.2 μm to 18 μm,
- wherein the LDD region of the second transistor includes a first region and a second region,
- wherein the first region and the gate electrode of the second transistor overlap with each other,
- wherein the second region and the gate electrode of the second transistor do not overlap with each other,
- wherein a length of the first region is 0.1 μm to 3 μm,
- wherein a channel length of the second transistor is 1 μm to 50 μm,
- wherein a channel width of the second transistor is 0.5 μm to 10 μm, and
- wherein each of the first transistor and the second transistor has n-type conductivity.
17 more elements
Dependencies are inferred from the claim text.