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US 9,431,468 B2Granted
Thin-film semiconductor device, organic EL display device, and manufacturing methods thereof
AssigneeJoled Inc.
InventorsTakahiro Kawashima, Masanori Miura
Life of this patent
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Abstract
A thin-film semiconductor device includes a substrate, a second protection layer, and an oxide semiconductor layer between the substrate and the second protection layer. The second protection layer has provided therein at least one through-hole in which an extraction electrode is embedded, the extraction electrode being electrically connected with the oxide semiconductor layer. The second protection layer has film density of 2.80 g/cm3 to 3.25 g/cm3.
Claims13
A thin-film semiconductor device, comprising:
- a substrate;
- a film containing aluminum oxide;
- an oxide semiconductor layer between the substrate and the film containing aluminum oxide;
- a film containing silicon oxide between the oxide semiconductor layer and the film containing aluminum oxide;
- and
- a film containing silicon nitride opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride, wherein
- each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride includes at least one through-hole in which an extraction electrode is embedded, the extraction electrode being electrically connected with the oxide semiconductor layer,
- when the substrate is viewed in a plan view, the through-hole included in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and
- the film containing aluminum oxide has a film density of 2.80 g/cm3 to 3.25 g/cm3.
6 more elements
A manufacturing method of a thin-film semiconductor device, the manufacturing method comprising:
- preparing a substrate;
- forming an oxide semiconductor layer above the substrate;
- forming a film containing silicon oxide above the oxide semiconductor layer;
- forming a film containing aluminum oxide above the film containing silicon oxide, the film containing silicon oxide being between the oxide semiconductor layer and the film containing aluminum oxide;
- forming a film containing silicon nitride above the film containing aluminum oxide, the film containing silicon nitride being opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride;
- providing at least one through-hole in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride;
- and
- embedding, in the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride, an extraction electrode that is to be electrically connected with the oxide semiconductor layer, wherein
- when the substrate is viewed in a plan view, the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and
- the film containing aluminum oxide has a film density of 2.80 g/cm3 to 3.25 g/cm3.
7 more elements
A manufacturing method of an organic EL display device, the manufacturing method comprising:
- preparing a substrate;
- forming an oxide semiconductor layer above the substrate;
- forming a film containing silicon oxide above the oxide semiconductor layer;
- forming a film containing aluminum oxide above the film containing silicon oxide, the film containing silicon oxide being between the oxide semiconductor layer and the film containing aluminum oxide;
- forming a film containing silicon nitride above the film containing aluminum oxide, the film containing silicon nitride being opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride;
- providing at least one through-hole in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride;
- embedding, in the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride, an extraction electrode that is to be electrically connected with the oxide semiconductor layer;
- and
- forming an organic EL element above the film containing silicon nitride, the organic EL element including a lower electrode that is to be electrically connected with the extraction electrode, a light-emitting layer containing an organic light-emitting material, and an upper electrode, wherein
- when the substrate is viewed in a plan view, the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and
- the film containing aluminum oxide has a film density of 2.80 g/cm3 to 3.25 g/cm3.
8 more elements
Dependencies are inferred from the claim text.