Switching components and memory units
AssigneeMicron Technology, Inc.
InventorDurai Vishak Nirmal Rawaswamy
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Abstract
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior.
Claims17
A switching component, comprising:
- a selector region between a pair of electrodes;
- wherein the selector region comprises silicon doped with nitrogen;
- and
- wherein the dopant comprises nitrogen to a total concentration within a range of from greater than 0 atomic percent to about 10 atomic percent.
A switching component, comprising:
- a first electrode;
- a selector region over the first electrode;
- a second electrode over the selector region;
- wherein the selector region comprises a stack of alternating first and second materials, with one of the first and second materials comprising semiconductor and the other of the first and second materials comprising nitrogen-doped semiconductor;
- and
- wherein said other of the first and second materials comprises silicon doped with nitrogen to a concentration within a range of from greater than 0 atomic percent to about 10 atomic percent;
- and wherein said one of the first and second materials consists of silicon.
A memory unit, comprising:
- a memory cell;
- a select device electrically coupled to the memory cell;
- the select device comprising a selector region between a pair of electrodes, wherein the selector region comprises semiconductor doped with nitrogen and has current versus voltage characteristics which include snap-back voltage behavior;
- wherein the selector region is a single homogenous material that directly contacts each electrode of said pair of electrodes;
- and
- wherein the single homogenous material comprises silicon doped with nitrogen to a concentration within a range of from greater than 0 atomic percent to about 10 atomic percent.
Dependencies are inferred from the claim text.