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US 9,431,457 B1Granted
Implementing deposition growth method for magnetic memory
AssigneeHGST Netherlands B.V.
InventorsLuiz M. Franca-Neto, Ricardo Ruiz
Life of this patent
Estimating the term…
Abstract
A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.
Claims9
A magnetic memory array comprising:
- a plurality of magnetic pillar memory cells includes a first conductor M1 being formed of a magnetic material, and a second conductor M2 being more electrically conductive than said conductor M1,
- a non-magnetic spacer layer coating said second conductor M2,
- said first magnetic conductor M1 disposed over said coated second conductor M2;
- an oxide barrier disposed over said grown first magnetic conductor M1 forming magnetic pillar memory cells;
- an interlayer dielectric (IDL) stack of word planes separated by a respective IDL extending between said plurality of magnetic pillar memory cells;
- and
- each of said magnetic pillar memory cells having a programmable area using unpatterned programmable magnetic media proximate to a respective word plane.
4 more elements
A magnetic memory array comprising:
- a plurality of magnetic pillar memory cells includes a first conductor M1 being formed of a magnetic material, and a second conductor M2 being more electrically conductive than said conductor M1,
- a non-magnetic spacer layer coating said second conductor M2,
- said first magnetic conductor M1 disposed over said coated second conductor M2;
- an oxide barrier disposed over said grown first magnetic conductor M1 forming magnetic pillar memory cells;
- and
- an interlayer dielectric (IDL) stack of word planes separated by a respective IDL extending between said plurality of magnetic pillar memory cells;
- said first conductor M1 formed of said magnetic material having a metallic granularity enabling independent programming of each of said magnetic pillar memory cells inside respective pillar holes of said magnetic pillar memory cells.
4 more elements
A magnetic memory array comprising:
- a plurality of magnetic pillar memory cells includes a first conductor M1 being formed of a magnetic material, and a second conductor M2 being more electrically conductive than said conductor M1,
- a non-magnetic spacer layer coating said second conductor M2,
- said first magnetic conductor M1 disposed over said coated second conductor M2;
- an oxide barrier disposed over said grown first magnetic conductor M1 forming magnetic pillar memory cells;
- and
- an interlayer dielectric (IDL) stack of word planes separated by a respective IDL extending between said plurality of magnetic pillar memory cells;
- each said respective word plane shared by all magnetic pillar memory cells in a respective plane level, and a bit line shared by said respective magnetic pillar memory cells.
4 more elements
Dependencies are inferred from the claim text.