Mechanisms for forming image sensor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsVolume Chien, Fu-Cheng Chang, Yi-Hsing Chu, Shiu-Ko Jangjian, Chi-Cherng Jeng
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Abstract
Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate. The image sensor device also includes an active region in the semiconductor substrate and surrounded by the isolation structure. The active region includes a light sensing region and a doped region, and the doped region has a horizontal length and a vertical length. A ratio of the horizontal length to the vertical length is in a range from about 1 to about 4.
Claims20
An image sensor device, comprising:
- a semiconductor substrate;
- an isolation structure in the semiconductor substrate;
- and
- an active region in the semiconductor substrate and surrounded by the isolation structure, wherein the active region comprises a light sensing region and a doped region, the doped region is outside of the light sensing region and has a horizontal length and a vertical length, and a ratio of the horizontal length to the vertical length is in a range from about 1 to about 4,
- wherein the doped region comprises a channel region and a source/drain region of a transfer transistor, and the source/drain region of the transfer transistor serves as a floating diffusion region of the image sensor device.
An image sensor device, comprising:
- a semiconductor substrate;
- an isolation structure in the semiconductor substrate;
- and
- an active region in the semiconductor substrate and surrounded by the isolation structure, wherein the active region comprises a light sensing region and a doped region, the doped region is outside of the light sensing region and has a first maximum length along a first direction and a second maximum length along a second direction substantially perpendicular to the first direction, and a ratio of the first maximum length to the second maximum length is in a range from about 1 to about 4,
- wherein the doped region comprises a channel region and a source/drain region of a transfer transistor, and the source/drain region of the transfer transistor serves as a floating diffusion region of the image sensor device.
An image sensor device, comprising:
- a semiconductor substrate;
- an isolation structure in the semiconductor substrate;
- a light sensing region in the semiconductor substrate and surrounded by the isolation structure, wherein the light sensing region has a first maximum length along a first direction and a second maximum length along a second direction substantially perpendicular to the first direction, and a ratio of the first maximum length to the second maximum length is in a range from about 1 to about 4;
- and
- a doped region in the semiconductor substrate and connected with the light sensing region, wherein the doped region is outside of the light sensing region and has a third maximum length along the second direction and a fourth maximum length along the first direction, and wherein a ratio of the third maximum length to the fourth maximum length is in a range from about 1 to about 4,
- wherein the doped region comprises a channel region and a source/drain region of a transfer transistor, and the source/drain region of the transfer transistor serves as a floating diffusion region of the image sensor device.
Dependencies are inferred from the claim text.