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US 9,431,441 B1Granted
Image sensor pixel structure
AssigneeUnited Microelectronics Corp.
InventorsZhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin, Chun-Yuan Wu, Chia-Fu Hsu
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AssigneeUnited Microelectronics Corp.
InventorsZhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin, Chun-Yuan Wu, Chia-Fu Hsu
Estimating the term…
A back side illumination image sensor pixel structure includes a substrate having a front side and a back side opposite to the front side, a sensing device formed in the substrate to receive an incident light through the back side of the substrate, two oxide-semiconductor field effect transistor (OS FET) devices formed on the front side of the substrate, and a capacitor formed on the front side of the substrate. The two OS FET devices are directly stacked on the sensing device and the capacitor is directly stacked on the OS FET devices. The two OS FET devices overlap the sensing device, and the capacitor overlaps both of the OS FET devices and the sensing device.
A back side illumination (BSI) image sensor pixel structure comprising:
An image sensor pixel structure comprising:
Dependencies are inferred from the claim text.