Semiconductor device and manufacturing method of the same

A semiconductor device comprising:

• a first insulating film;
• a first barrier film over the first insulating film;
• a second insulating film over the first barrier film, the second insulating film including a region containing oxygen at a higher proportion than oxygen in a stoichiometric composition;
• and
• a first transistor comprising a first oxide semiconductor film over the second insulating film,
• wherein an amount of hydrogen molecules released from the first insulating film at 450° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of an amount of released hydrogen molecules at 350° C.

A semiconductor device comprising:

• a memory cell comprising:
• a first transistor comprising an oxide semiconductor film comprising a channel formation region;
• and
• a second transistor,
• wherein one of a source and a drain of the first transistor is electrically connected to a node,
• wherein a gate of the second transistor is electrically connected to the node, and
• wherein the memory cell is configured to hold data in the node at 85° C. for 10 years or longer when the first transistor is in an off-state.