Method for forming merged contact for semiconductor device

A method for forming a semiconductor device, the method comprising:

• forming a first fin and a second fin on a semiconductor substrate;
• forming a sacrificial gate stack over a channel region of the first fin and the second fin;
• depositing a layer of spacer material over the first fin and the second fin;
• depositing a layer of dielectric material over the layer of spacer material;
• removing a portion of the dielectric material to form a first cavity that exposes a portion of the first fin;
• removing a portion of the first fin to recess the first fin;
• growing a first semiconductor material on the exposed portion of the first fin to form a source/drain region on the first fin;
• depositing a layer of protective material on the source/drain region on the first fin;
• removing a portion of the dielectric material to form a second cavity that exposes a portion of the second fin;
• and
• growing a second semiconductor material on the exposed portion of the second fin to form a source/drain region on the second fin.

A semiconductor device comprising:

• a first semiconductor fin arranged on a substrate;
• a gate stack arranged over a channel region of the first semiconductor fin;
• a first source/drain region comprising an epitaxially grown semiconductor material on a surface of the first semiconductor fin;
• a conductive metal material arranged substantially around the first source/drain region;
• and
• a dielectric material arranged adjacent to the first semiconductor fin, adjacent to the conductive metal material and over the conductive metal material.