Single diffusion break with improved isolation and process window and reduced cost
AssigneeGlobalfoundries Inc.
InventorsHui Zang, Bingwu Liu
Life of this patent
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Abstract
Methods of forming a SDB with a partial or complete insulator structure formed over the SDB and resulting devices are provided. Embodiments include forming a SDB with a first width in a substrate; forming a first metal gate in an ILD on top of the SDB, with a second width larger than the first width; forming second and third metal gates in the ILD on the substrate on opposite sides of the first metal gate, the second and third metal gates laterally separated from the first metal gate; forming a photoresist over the second and third gates; removing the first metal gate down to the SDB, forming a cavity; removing the photoresist; and filling the cavity with an insulator layer.
Claims5
A method comprising:
- forming a single diffusion break (SDB) with a first width in a substrate;
- forming a first metal gate in an interlayer dielectric (ILD) on top of the SDB, with a second width larger than the first width;
- forming second and third metal gates in the ILD on the substrate on opposite sides of the first metal gate, the second and third metal gates laterally separated from the first metal gate;
- forming a photoresist over the second and third gates;
- removing the first metal gate down to the SDB, forming a cavity;
- removing the photoresist;
- and
- filling the cavity with an insulator layer,
- wherein each of the second and third metal gates is formed to a third width smaller than the second width.
Dependencies are inferred from the claim text.