Series-connected nanowire structures

A semiconductor structure, comprising:

• a plurality of vertically stacked and released nanowires extending through a common metal replacement gate structure;
• and a plurality of epitaxially grown conductively doped contacts electrically connecting to the stacked nanowires on different sides of the gate structure, in a series configuration;
• wherein the plurality of conductively doped contacts comprise:
• a first contact of the doped contacts electrically connecting a first nanowire to a second nanowire on a first side of the gate structure;
• a second contact of the doped contacts electrically connecting to the first nanowire on a second side of the gate structure;
• a third contact of the doped contacts electrically connecting the second nanowire to a third nanowire on the second side of the gate structure;
• a fourth contact of the doped contacts electrically connecting to the third nanowire on the first side of the gate structure;
• metal contacts electrically connecting the first contact and the second nanowire and the third contact and the third nanowire;
• and
• the plurality of vertically stacked nanowires and the doped contacts share the common metal replacement gate structure.