Electrostatic discharge protection
AssigneeDNAE Group Holdings Limited
InventorsDavid Garner, Hua Bai
Life of this patent
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Abstract
A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process.
Claims17
A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate, the device being configured such that the electrical impedance from said sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from said sensing layer to the floating gate and wherein the device is configured such that, in use, said sensing layer contacts a fluid sample.
Dependencies are inferred from the claim text.