Integrated circuit, semiconductor device based on integrated circuit, and standard cell library

A semiconductor device comprising:

• a substrate including at least a first active region having a first conductive type;
• a plurality of gate electrodes extending in a first direction such that the plurality of gate electrodes are parallel to each other in a second direction, the second direction being perpendicular to the first direction, the plurality of gate electrodes including at least a first gate electrode and a skipped gate electrode;
• first contacts at a respective one of two sides of the skipped gate electrode of the plurality of gate electrodes, the skipped gate electrode being one of the plurality of gate electrodes connected to the first contacts;
• and
• a second contact electrically connected to the skipped gate electrode and the first contacts in the first active region and electrically disconnected from the first gate electrode such that the second contact, the skipped gate electrode and the first contacts form a single node in the first active region.

An integrated circuit (IC) comprising:

• at least one cell including,
• a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction, the second direction being perpendicular to the first direction;
• first contacts at a respective one of two sides of at least one conductive line from among the plurality of conductive lines;
• and
• a second contact on the at least one conductive line and the first contacts, the second contact electrically connected to the at least one conductive line and the first contacts such that the second contact, the at least one conductive line, and the first contacts form a single node, wherein
• the first contacts have one of (i) a same length in the first direction such that the first contacts and the second contact form an H-shaped jumper and (ii) different lengths in the first direction such that the first contacts and the second contact form an L-shaped jumper.