Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure
AssigneesSTMicroelectronics S.r.l., STMicroelectronics (Crolles 2) SAS
InventorsRachid Taibi, Cédrick Chappaz, Lea Di Cioccio, Laurent-Luc Chapelon
Life of this patent
Estimating the term…
Abstract
A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.
Claims16
An integrated structure comprising:
- a pair of integrated circuits (ICs) having upper faces joined together to define an interface therebetween and with each IC including a respective one of a pair of metallic lines at the interface, the pair of metallic lines being laterally spaced apart to permit diffusion therebetween, a first IC of said pair of ICs having a plurality of cavities extending from a surface of said first IC and passing therethrough and opening onto respective electrical contact locations in electrical contact with said pair of metallic lines, one of the plurality of cavities extending through the interface to a second IC of said pair of ICs.
An integrated structure comprising:
- a pair of integrated circuits (ICs) having upper faces joined together to define an interface therebetween and with each IC including a respective one of a pair of conductive lines at the interface, the pair of conductive lines being laterally spaced apart to permit diffusion therebetween, a first IC of said pair of ICs having a plurality of cavities extending from a surface of said first IC and passing therethrough and opening onto respective electrical contact locations in electrical contact with said pair of conductive lines, one of the plurality of cavities extending through the interface to a second IC of said pair of ICs;
- the plurality of cavities each having a width greater than 80 microns and a height greater than 5 microns.
An integrated structure comprising:
- a pair of integrated circuits (ICs) having upper faces joined together to define an interface therebetween and with each IC including a respective one of a pair of metallic lines at the interface, the pair of metallic lines being laterally spaced apart to permit diffusion therebetween, a first IC of said pair of ICs having a plurality of cavities extending from a surface of said first IC and passing therethrough and opening onto respective electrical contact locations in electrical contact with said pair of metallic lines, one of the plurality of cavities extending through the interface to a second IC of said pair of ICs;
- the plurality of cavities each having a width greater than 80 microns, and a height greater than 5 microns and less than 15 microns.
Dependencies are inferred from the claim text.