Antenna apparatus and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLai Wei Chih, Monsen Liu, En-Hsiang Yeh, Chuei-Tang Wang, Chen-Hua Yu
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Abstract
An antenna apparatus comprises a semiconductor die comprising a plurality of active circuits, a molding layer formed over the semiconductor die, wherein the semiconductor die and the molding layer form a fan-out package, a first dielectric layer formed on a first side of the semiconductor die over the molding compound layer, a first redistribution layer formed in the first dielectric layer and an antenna structure formed above the semiconductor die and coupled to the plurality of active circuits through the first redistribution layer.
Claims15
A device comprising:
- a semiconductor die embedded in a molding compound layer to form a fan-out package, wherein the fan-out package comprises a first through via extending through the fan-out package and a second through via extending through the fan-out package, and wherein the semiconductor die is between the first through via and the second through via;
- a plurality of post passivation interconnects formed over the molding compound layer;
- and
- an antenna structure electrically connected to the semiconductor die through the post passivation interconnects, wherein the antenna structure is formed by a first metal line and a second metal line, and wherein:
- the first metal line is over the first through via and extends horizontally beyond sidewalls of the first through via;
- and
- the second metal line is over the second through via and extends horizontally beyond sidewalls of the second through via.
A device comprising:
- a semiconductor die comprising a plurality of active circuits;
- a molding compound layer formed over the semiconductor die, wherein the semiconductor die and the molding compound layer form a fan-out package;
- a first through package via, a second through package via and a third through package via formed in the molding compound layer, wherein:
- the semiconductor die is between the first through package via and the second through package via;
- and
- the third through package via is between a top surface of the semiconductor die and a top surface of the molding compound layer;
- a first dielectric layer formed on a first side of the semiconductor die over the molding compound layer;
- a plurality of interconnect structures formed in the first dielectric layer;
- and
- an antenna structure formed on a top surface of the first dielectric layer and electrically connected to the plurality of active circuits through a first via, a metal line, a second via and the third through package via, wherein a top surface of the first via is in direct contact with a bottom surface of the antenna structure and a bottom surface of the first via is in direct contact with a top surface of the metal line, and wherein the antenna structure extends horizontally beyond sidewalls of the first through package via and the second through package via.
A method comprising:
- embedding a semiconductor die in a molding compound layer;
- forming a first group of through vias in the molding compound layer;
- forming a first interconnect structure on a first side of the semiconductor die, wherein the first interconnect structure is coupled the semiconductor die through the first group of through vias;
- depositing a first dielectric layer over the molding compound layer, wherein the first interconnect structure is embedded in the first dielectric layer;
- forming a post passivation interconnect over the first dielectric layer;
- and
- forming an antenna structure above the post passivation interconnect, wherein the antenna structure is electrically connected to the semiconductor die, wherein the antenna structure comprises a first metal line and a second metal line, and wherein the first metal line and the second metal line are placed in a symmetrical manner with respect to the semiconductor die.
Dependencies are inferred from the claim text.