Method of forming a semiconductor package
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Chin-Chuan Chang, Jui-Pin Hung
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Abstract
A method of forming a semiconductor package includes forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier. The method further includes placing a semiconductor die on a surface of the interconnecting structure. The method further includes placing a package structure on the surface of the interconnecting structure, wherein the semiconductor die fits in a space between the interconnecting structure and the package structure. The method further includes performing a reflow to bond the package structure to the interconnecting structure.
Claims19
A method of forming a semiconductor package, the method comprising:
- forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier;
- placing a semiconductor die on a surface of the interconnecting structure;
- placing a package structure on the surface of the interconnecting structure, wherein the semiconductor die fits in a space between the interconnecting structure and the package structure;
- performing a reflow to bond the package structure to the interconnecting structure, wherein the reflow also bonds the semiconductor die to the interconnecting structure;
- and
- covering the package structure and the semiconductor die with a molding layer, wherein the molding layer contacts a top surface of the semiconductor die and a bottom surface of the package structure.
A method of forming a semiconductor package, the method comprising:
- forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier;
- placing a semiconductor die on a surface of the interconnecting structure;
- placing a package structure on the surface of the interconnecting structure, wherein the semiconductor die fits in a space between the interconnecting structure and the package structure;
- performing a reflow to bond the package structure to the interconnecting structure;
- performing another reflow after the semiconductor die is placed on the surface of the interconnecting structure and prior to placing the package structure;
- and
- covering the package structure and the semiconductor die with a molding layer, wherein the molding layer contacts a top surface of the semiconductor die and a bottom surface of the package structure.
A method of making a semiconductor package, the method comprising:
- forming an interconnecting structure, wherein the interconnecting structure includes a first redistribution layer (RDL) and a second RDL spaced from the first RDL, and the interconnecting structure has a thickness equal to or less than about 30 □m;
- bonding a semiconductor die to the first RDL using a first bonding structure;
- bonding the semiconductor die to the second RDL using a second bonding structure;
- bonding a package structure to the first RDL using a third bonding structure;
- and
- bonding the package structure to the second RDL using a fourth bonding structure, wherein the semiconductor die is between the package structure and the interconnecting structure.
A method of making a semiconductor package, the method comprising:
- forming an interconnecting structure, wherein the interconnecting structure comprises a first redistribution layer (RDL);
- bonding a first semiconductor die to the first RDL using a first bonding structure having a first width;
- and
- bonding a first package structure to the first RDL using a second bonding structure having a second width different from the first width, wherein the first package structure is on an opposite side of the first semiconductor die from the interconnecting structure, and an overall height of the semiconductor package ranges from about 350 microns (μm) to about 1050 μm.
Dependencies are inferred from the claim text.