Semiconductor device and method of forming the same

A method of forming a semiconductor device, the method comprising:

• forming a first region over a substrate, the first region comprising a first n type material;
• forming a second region over the substrate and laterally adjacent to the first region, the second region comprising a first p type material;
• forming a third region within the second region and laterally separated from the first region, the third region comprising a second n type material;
• forming a fourth region atop the third region, the fourth region comprising a second p type material;
• forming a fifth region within the first region and laterally separated from the second region, the fifth region comprising a third p type material;
• and
• forming a sixth region atop the fifth region, the sixth region comprising a third n type material.

A semiconductor device comprising:

• a substrate;
• a first region over the substrate, the first region comprising a first n type material;
• a second region over the substrate and laterally adjacent to the first region, wherein the second region comprises a first part comprising a first p type material and a second part comprising a second p type material;
• a third region disposed within the second part of the second region and laterally separated from the first part of the second region, the third region comprising a second n type material;
• a fourth region disposed atop the third region, the fourth region comprising a third p type material;
• a fifth region disposed within the first region and laterally separated from the second region, the fifth region comprising a fourth p type material;
• and
• a sixth region disposed atop the fifth region, the sixth region comprising a third n type material.