Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a substrate having a device region and a seal ring region surrounding the device region;
• a dielectric layer disposed on the substrate;
• a first seal ring structure located within the dielectric layer on the seal ring region and surrounding the device region, wherein the first seal ring structure includes:
• a plurality of first connection layers that are overlappingly disposed, vertically adjacent first connection layers of the plurality of first connection layers being separated by the dielectric layer and being staggeredly arranged,
• wherein at least one first connection layer of the plurality of first connection layers is formed by a plurality of discrete sub-connection layers, horizontally adjacent sub-connection layers of the plurality of discrete sub-connection layers being separated by the dielectric layer;
• a plurality of first conductive plugs between the vertically adjacent first connection layers, wherein:
• a top of each first conductive plug of the plurality of first conductive plugs is connected to an upper first connection layer of the vertically adjacent first connection layers,
• a bottom of at least one first conductive plug between at least two vertically adjacent first connection layers of the plurality of first connection layers extends into the dielectric layer that is between horizontally adjacent sub-connection layers of a lower first connection layer of the at least two vertically adjacent first connection layers, and the bottom of the at least one first conductive plug is not directly connected with any of the horizontally adjacent sub-connection layers, and
• the plurality of first connection layers includes one bottom first connection layer, in direct contact with more than one first conductive plugs that are further in direct contact with the substrate under the dielectric layer.