Semiconductor package and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGuan-Yu Chen, Yu-Wei Lin, Tin-Hao Kuo, Chen-Shien Chen
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Abstract
The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.
Claims20
A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value under a predetermined temperature range;
- determining a difference between a density of a top metal and a density of a bottom metal across a substrate according to the die warpage value;
- forming the top metal and the bottom metal in the substrate having the difference between the density of the top metal and the density of the bottom metal;
- and
- joining the die and the substrate having the top metal and the bottom metal under the predetermined temperature range;
- wherein the top metal comprises all metal layers overlying a middle layer, and the bottom metal comprises all metal layers underlying the middle layer, the middle layer comprising a core or a metal layer.
A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value of a die under a reflow temperature joining the die to a substrate;
- determining a difference between a density of a top metal and a density of a bottom metal of the substrate according to the die warpage value;
- forming the top metal and the bottom metal in the substrate having the difference between the density of the top metal and the density of the bottom metal;
- and
- joining the die and the substrate having the top metal and the bottom metal under the reflow temperature, the top metal being closer to the die than the bottom metal;
- wherein the top metal having j metal layers overlying a middle layer, the top metal comprising a top metal density about a sum of densities of j metal layers divided by j;
- and wherein the bottom metal having k metal layers underlying the middle layer, the bottom metal comprising a bottom metal density about a sum of densities of k metal layers divided by k;
- wherein j and k are positive integers, and wherein the bottom metal density is greater than the top metal density.
A method for manufacturing a semiconductor package, comprising:
- determining a die warpage value of a die under a temperature range of from 240 to 270 degrees Celsius;
- determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value;
- forming the top metal and the bottom metal in the substrate having the difference between the density of the top metal and the density of the bottom metal;
- and
- joining the die and the substrate having the top metal and the bottom metal under the temperature range, the top metal being closer to the die than the bottom metal;
- wherein the density of the bottom metal is greater than the density of the top metal.
Dependencies are inferred from the claim text.