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US 9,431,350 B2Granted
Crack-stopping structure and method for forming the same
AssigneeUnited Microelectronics Corp.
InventorKuang-Hui Tang
Life of this patent
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Abstract
A crack-stopping structure includes a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, a plurality of metal patterns formed in the scribe line regions, and a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions. The wafer further includes a front side and a back side, and the TSHs respectively include at least a bottom opening formed in the bottom side of the wafer. The groups of TSHs are formed between the metal patterns and the dies.
Claims12
A crack-stopping structure comprising:
- a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, and having a front side and a back side;
- a plurality of metal patterns formed substantially in a middle portion of the scribe line regions;
- and
- a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions, the groups of TSHs being formed between the metal patterns and the dies, wherein
- each of the TSHs opens at the front side and the back side of the semiconductor wafer, and wherein the TSHs are unfilled therethrough.
2 more elements
Dependencies are inferred from the claim text.