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US 9,431,346 B2Granted
Graphene-metal E-fuse
AssigneeGlobalfoundries Inc.
InventorsJunjing Bao, Griselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Andrew T. Kim, Naftali E. Lustig, Andrew H. Simon
Life of this patent
Estimating the term…
Abstract
A structure including an Mx level including a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, the second Mx metal including graphene, and an Mx+1 level above the Mx level, the Mx+1 level including an Mx+1 metal and a via, the via electrically connects the third Mx metal to the Mx+1 metal in a vertical orientation.
Claims13
A method comprising:
- forming an Mx level comprising a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, such that the third Mx metal abuts and is positioned between the first and second Mx metals, wherein the second and third Mx metals comprise graphene;
- and
- forming an Mx+1 level above the Mx level, the Mx+1 level comprising an Mx+1 metal and an Mx+1 via, the Mx+1 via electrically connecting the second Mx metal to the Mx+1 metal in a vertical orientation, wherein the Mx+1 via is adjacent to the third Mx metal and directly contacts the second Mx metal.
A method comprising:
- etching, in an Mx dielectric layer, a first trench and a second trench;
- filling the first trench and the second trench with a metal to form a first Mx metal, and a second Mx metal;
- forming a third trench abutting and in between the first Mx metal and the second Mx metal;
- filling the third trench with graphene to form a third Mx metal, the graphene of the third Mx metal is in direct contact with the metal of both the first Mx metal and the second Mx metal;
- etching, in an Mx+1 dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal;
- and
- filling the via opening and the trench with the metal to form an Mx+1 via and an Mx+1 metal, the Mx+1 via being adjacent to the third Mx metal and in direct contact with the second Mx metal in the Mx dielectric layer.
4 more elements
Dependencies are inferred from the claim text.