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US 9,431,345 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsAtsuko Sakata, Masayuki Kitamura, Makoto Wada, Masayuki Katagiri, Yuichi Yamazaki, Akihiro Kajita
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Abstract
According to one embodiment, a semiconductor device includes a metal interconnect and a graphene interconnect which are stacked to one another.
Claims5
A semiconductor device comprising:
- a plug;
- a metal interconnect;
- a graphene interconnect;
- and
- an insulation region,
- wherein
- the plug is formed in the insulation region, electrically connected to the metal interconnect, and has a top surface and a bottom surface parallel with each other, and side surfaces between the top surface and the bottom surface,
- the metal interconnect includes a main body portion and a barrier metal portion provided on a bottom surface and side surfaces of the main body portion, a top surface of the main body portion being located lower than a top surface of the barrier metal portion,
- the graphene interconnect is formed on the top surface of the main body portion, on the insulation region and on portions of the side surfaces of the plug, and
- the insulation region has an inclined surface around the plug.
7 more elements
Dependencies are inferred from the claim text.