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US 9,431,344 B2Granted
Semiconductor device
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Jin Ho Bin
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Abstract
A semiconductor device may include pillars and a plurality of conductive layers being stacked while surrounding the pillars and including a plurality of first regions including non-conductive material layers and a plurality of second regions including conductive material layers, wherein the first regions and the second regions are alternately arranged.
Claims28
A semiconductor device, comprising:
- pillars each including a channel layer and a memory layer surrounding the channel layer, wherein the memory layer includes at least one of a charge blocking layer, a data storage layer or a tunnel insulating layer;
- and
- a plurality of conductive layers being stacked while surrounding the pillars and including a plurality of first regions having non-conductive material layers and a plurality of second regions having conductive material layers, wherein the non-conductive material layers and the conductive material layers are alternately arranged along a horizontal direction crossing the pillars,
- wherein each of the non-conductive material layers fills a space between the pillars and is formed on the memory layer.
1 more element
A semiconductor device comprising:
- pillars;
- conductive patterns surrounding at least two rows of the pillars;
- and
- first slits defining edges of the conductive patterns, wherein the conductive patterns surrounding the at least two rows of the pillars are disposed between the first slits,
- wherein each of the conductive patterns includes a center region having a non-conductive layer and side regions having conductive material layers,
- wherein the conductive material layers and the non-conductive layer are disposed on a same horizontal plane.
3 more elements
A semiconductor device, comprising:
- pillars extending in a first direction;
- and
- a plurality of conductive layers being stacked while surrounding the pillars and including a plurality of first regions having air gaps and a plurality of second regions having conductive material layers, wherein the first regions and the second regions are alternately arranged;
- and
- a plurality of insulating layers being stacked while surrounding the pillars, the insulating layers and the conductive layers alternately stacked along the pillars;
- wherein each of the first regions is defined between the pillars disposed between neighboring second regions, and
- wherein each of the air gaps is arranged between the insulating layers neighboring in the first direction, and is formed without cutting between neighboring pillars in a second direction crossing the conductive layers.
4 more elements
Dependencies are inferred from the claim text.