Semiconductor device having metal patterns and piezoelectric patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsYi-Koan Hong, Byung-Lyul Park, Ji-Soon Park, Si-Young Choi
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the first surface of the substrate. A through-silicon-via and/or a pad can be directly bonded to another through-silicon-via and/or another pad by applying pressure only, and without performing a heat process.
Claims20
A semiconductor device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a metal pattern protruding from the first surface of the substrate;
- an inter-layer insulating layer on the second surface of the substrate;
- a piezoelectric pattern covering a side surface of the metal pattern on the first surface of the substrate;
- and
- a passivation layer covering a side surface of the piezoelectric pattern on the first surface of the substrate.
A semiconductor device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a through-via structure vertically passing through the substrate, wherein an end portion of the through-via structure protrudes from the first surface of the substrate;
- a piezoelectric pattern disposed on the first surface of the substrate and covering a side surface of the end portion of the through-via structure;
- a first passivation layer disposed on the first surface of the substrate and covering a side surface of the piezoelectric pattern;
- and
- a second passivation layer disposed on the second surface of the substrate.
A semiconductor device, comprising:
- a passivation layer defining a metal pattern on a first surface of a substrate, wherein the metal pattern includes a through-via structure vertically passing through the substrate;
- an inter-layer insulating layer disposed on a second surface of the substrate;
- and
- a piezoelectric pattern formed between the metal pattern and the passivation layer on the first surface of the substrate,
- wherein the through-via structure comprises:
- a pillar-shaped through-via core;
- a through-via barrier layer surrounding the through-via core;
- and
- a through-via liner surrounding the through-via barrier layer, wherein the piezoelectric pattern is in contact with a first portion of a side surface of the through-via core and not in contact with a second portion of the side surface of the through-via core.
Dependencies are inferred from the claim text.