Wiring structure for trench fuse component with methods of fabrication

A method of fabricating a trench fuse component, the method comprising:

• forming a first insulator layer between a doped conductive layer and an oppositely doped substrate of an integrated circuit (IC) structure, such that no p-n junction exists between the oppositely doped substrate and the doped conductive layer;
• forming a first electrical terminal within the doped conductive layer, wherein the first electrical terminal includes a dielectric liner thereon;
• forming a second electrical terminal within the doped conductive layer;
• forming a second insulator layer adjacent to the doped conductive layer, wherein each of the first electrical terminal and the second electrical terminal are at least partially embedded within the second insulator layer;
• forming an interlayer dielectric adjacent over the second insulator layer, wherein the second electrical terminal is at least partially embedded within the interlayer dielectric;
• and
• forming an electrical contact within the interlayer dielectric, wherein the formed electrical contact is electrically coupled to the second electrical terminal.

A method of fabricating a trench fuse component, the method comprising:

• forming a first insulator layer between a doped conductive layer and an oppositely doped substrate of an integrated circuit (IC) structure, such that no p-n junction exists between the oppositely doped substrate and the doped conductive layer;
• forming a first electrical terminal within the doped conductive layer, wherein the first electrical terminal includes a dielectric liner thereon;
• forming a second electrical terminal within the doped conductive layer;
• and
• forming a doped conductive material within each of the first electrical terminal and the second electrical terminal, wherein each of the doped conductive material and the doped conductive layer have a common polarity.