Semiconductor devices and methods of manufacturing the same
AssigneeSK hynix Inc.
InventorYong Hyun Lim
Life of this patent
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Abstract
A semiconductor device includes a substrate including a memory cell region and a contact region, a string structure including conductive layers and first interlayer insulating layers alternately stacked over the substrate and protruded toward a lower layer from the memory cell region toward the contact region, barrier rib patterns spaced apart from one another over the conductive layers in the contact region and configured to open the layers of the conductive layers in the contact region through the spaced spaces, and first contact plugs filled into the space between barrier rib patterns adjacent to each other and coupled to the conductive layers in the contact region.
Claims6
A semiconductor device, comprising:
- a substrate comprising a memory cell region and a contact region;
- a stacked structure comprising conductive layers and first interlayer insulating layers alternately stacked over the substrate, wherein the conductive layers and the first interlayer insulating layers extend from the memory cell region to the contact region;
- barrier rib patterns including mask layer patterns, spaced apart from one another, provided over the stacked structure in the contact region;
- spaces passing through at least one of the conductive layers and the first interlayer insulating layers between the mask layer patterns, wherein the spaces are formed to open the conductive layers, respectively;
- and
- contact plugs and insulating layers alternately filled in the spaces, wherein a length of each of the contact plugs and the insulating layers increases as a distance of each of the contact plugs and the insulating layers from the memory cell region increases.
Dependencies are inferred from the claim text.