Semiconductor device and method of forming penetrable film encapsulant around semiconductor die and interconnect structure

A semiconductor device, comprising:

• a semiconductor die;
• a first interconnect structure disposed adjacent to the semiconductor die;
• and
• a multi-layer film encapsulant including,
• (a) a thermo-setting adhesive film layer disposed over the semiconductor die and first interconnect structure to embed the semiconductor die and a first portion of the first interconnect structure,
• (b) a ultraviolet B-stage film adhesive layer in contact with a first surface of the thermo-setting adhesive film layer with a second portion of the first interconnect structure extending into the ultraviolet B-stage film adhesive layer, and
• (c) a base layer in contact with a surface of the ultraviolet B-stage film adhesive layer opposite the thermo-setting adhesive film layer.

A semiconductor device, comprising:

• a semiconductor die;
• a first interconnect structure disposed adjacent to the semiconductor die;
• and
• a multi-layer film encapsulant including,
• (a) a penetrable film layer disposed over the semiconductor die and first interconnect structure to embed the semiconductor die and a first portion of first interconnect structure, the penetrable film layer coplanar with a first and second surface of the semiconductor die,
• (b) a film adhesive layer in contact with a surface of the penetrable film layer with a second portion of the first interconnect structure extending into the film adhesive layer, and
• (c) a base layer in contact with a surface of the film adhesive layer opposite the penetrable film layer.

A semiconductor device, comprising:

• a semiconductor die;
• a first interconnect structure disposed adjacent to the semiconductor die;
• and
• a multi-layer film encapsulant including,
• (a) a penetrable film layer pressed over the semiconductor die and first interconnect structure to embed the semiconductor die and a first portion of the first interconnect structure,
• (b) a film adhesive layer in contact with a surface of the penetrable film layer with a second portion of the first interconnect structure extending into the film adhesive layer, and
• (c) a base layer in contact with a surface of the film adhesive layer opposite the penetrable film layer.