High efficiency module

A module, comprising:

• a low-side MOSFET (metal-oxide-semiconductor field-effect transistor) having a gate electrode, a source electrode and a drain electrode;
• a high-side MOSFET comprising a gate electrode, a source electrode and a drain electrode;
• a first frame held in direct contact with both the drain electrode of the low-side MOSFET and the source electrode of the high-side MOSFET;
• a second frame held in direct contact with one of the gate electrode and the source electrode of the low-side MOSFET;
• a third frame comprising a first surface and a second surface opposite to the first surface, the first surface being in direct contact with the drain electrode of the high-side MOSFET;
• and
• a resin package covering at least a part of each of the low-side MOSFET, the high-side MOSFET, the first frame, the second frame and the third frame, the resin package comprising a flat mounting surface for being soldered to a circuit board,
• wherein the second surface of the third frame exposed at the mounting surface of the resin package,
• the low-side MOSFET and the high-side MOSFET are arranged to face each other in a normal direction perpendicular to the mounting surface of the resin package with the first frame intervening between the low-side MOSFET and the high-side MOSFET,
• each of the first frame and the second frame has a terminal surface exposed at the mounting surface of the resin package, and
• the terminal surface of the first frame, the terminal surface of the second frame and the second surface of the third frame are spaced apart from an outer periphery of the mounting surface of the resin package as viewed in the normal direction to the mounting surface.