Power device and preparation method thereof
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsHamza Yilmaz, Yan Xun Xue, Jun Lu
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AssigneeAlpha and Omega Semiconductor Incorporated
InventorsHamza Yilmaz, Yan Xun Xue, Jun Lu
Estimating the term…
A power semiconductor package and a method of preparation are disclosed. The power semiconductor package includes a pair of first and second die paddles arranged side by side, a first semiconductor chip attached to the first die paddle, a second semiconductor chip attached to the second die paddle, a metal clip electrically connecting a first electrode at the top surface of the first semiconductor chip and a first electrode at the top surface of the second semiconductor chip to a second pin, a first conductive structure connecting a second electrode at the top surface of a first semiconductor chip to a first pin, and a second conductive structure connecting a second electrode at the top surface of the second semiconductor chip to a third pin. In examples of the present disclosure, double-chip common source technique for the source electrodes of two power MOSFETs is achieved by applying a T-shape metal clip.
A power device comprising:
Dependencies are inferred from the claim text.