Conductive pad on protruding through electrode
AssigneeAmkor Technology, Inc.
InventorsWon Chul Do, Yong Jae Ko
Life of this patent
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Abstract
To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.
Claims20
A semiconductor device comprising:
- a semiconductor die comprising a first die surface and a second die surface opposite the first die surface;
- a through hole in the semiconductor die that extends between the first die surface and the second die surface, the through hole comprising an inner wall;
- an insulating layer coupled to the inner wall of the through hole;
- a through electrode inside of the insulating layer;
- a dielectric layer coupled to the first die surface, where the through electrode passes completely through and contacts the dielectric layer;
- and
- a conductive pad coupled to the through electrode.
A semiconductor device comprising:
- a semiconductor die comprising a first die surface and a second die surface opposite the first die surface;
- a through hole in the semiconductor die that extends between the first die surface and the second die surface, the through hole comprising an inner wall and comprising a through hole diameter at the first die surface;
- an insulating layer coupled to the inner wall of the through hole;
- a through electrode inside of the insulating layer;
- a dielectric layer coupled to the first die surface, where the through electrode passes completely through the dielectric layer;
- and
- a conductive pad coupled to the through electrode, where the conductive pad comprises a pad diameter that is less than or equal to the through hole diameter.
A semiconductor device comprising:
- a semiconductor die comprising a first die surface and a second die surface opposite the first die surface;
- a through hole in the semiconductor die that extends between the first die surface and the second die surface, the through hole comprising an inner wall and comprising a through hole diameter at the first die surface;
- an insulating layer coupled to the inner wall of the through hole;
- a through electrode inside of the insulating layer;
- a dielectric layer coupled to the first die surface, where the through electrode passes completely through the dielectric layer;
- and
- a conductive pad coupled to the through electrode, where the conductive pad comprises a pad diameter that is less than or equal to the through hole diameter,
- wherein the first die surface is an inactive surface of the semiconductor die, and the second die surface is an active surface of the semiconductor die.
Dependencies are inferred from the claim text.