Methods and structures to facilitate through-silicon vias

A system comprising:

• an integrated circuit device, comprising:
• a first metal pad on a first level over a semiconductor substrate, the first metal pad comprising a first plurality of openings extending therethrough;
• and
• a through-silicon via extending through the semiconductor substrate to the first metal pad, the through-silicon via extending laterally across and vertically into at least some openings of the first plurality of openings.

An integrated circuit device, comprising:

• a first metal pad on a first level over a semiconductor substrate, the first metal pad comprising a first plurality of openings extending therethrough;
• a through-silicon via extending through the semiconductor substrate to the first metal pad, the through-silicon via extending across at least some openings of the first plurality of openings;
• a dielectric layer overlying the first metal pad;
• a second metal pad on a second level overlying the dielectric layer and substantially directly overlying the first metal pad, the second metal pad comprising a second plurality of openings extending therethrough;
• an other dielectric layer, the other dielectric layer overlying the second metal pad;
• and
• a third metal pad on a third level overlying the other dielectric layer and substantially directly overlying the second metal pad.