US 9,431,308 B2 · Critical size compensating method of deep groove etching process

Abstract

A critical dimension compensating method of a deep trench etching process includes: obtaining an etching critical dimension difference; compensating an masking layer layout for wafer etching according to a distance between an etching position and the center position of the wafer, and the etching critical dimension difference; and performing a deep trench etching to the wafer according to the compensated masking layer layout. The dimension of the etching patterns of the masking layer layout is compensated by using half of the critical dimension difference as the compensation value, such that the etch rate difference and the etching dimension difference caused by uneven distribution of the critical dimension at different wafer locations during the deep trench etching process are improved, thus greatly improving the uniformity of the critical dimension of the deep trench etching structure.

Claims9

Dependent claims

A critical dimension compensating method of a deep trench etching process, comprising:

obtaining an etching critical dimension difference between a center position of a wafer and an edge position of the wafer after a deep trench etching process;
compensating a masking layer layout for wafer etching according to a distance between an etching position and the center position of the wafer, and the etching critical dimension difference, such that dimensions of etching patterns exposed by the masking layer layout being gradually decreased along a radial direction of the wafer from center to edge;
and a difference between a dimension of an etching pattern exposed by the masking layer layout at the edge of the wafer and a dimension of an etching pattern exposed by the masking layer layout at the center of the wafer equaling to half of the etching critical dimension difference;
and
performing a deep trench etching to the wafer according to the compensated masking layer layout.

2 more elements

Dependencies are inferred from the claim text.

Critical size compensating method of deep groove etching process

Life of this patent

Critical size compensating method of deep groove etching process

Life of this patent

Abstract

Claims9