Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

A semiconductor structure comprising:

• a semiconductor region;
• a first body region that touches the semiconductor region, the first body region having a first channel region and a below-the-first channel region that touches and lies below the first channel region, the first channel region having a first middle point, the first channel region at the first middle point including a first type of impurity atoms, being substantially free of a second type of impurity atoms, and having an average dopant concentration, the below-the-first channel region having a dopant profile;
• a first source region that touches the first body region, the first source region including substantially more of the second type of impurity atoms than the first type of impurity atoms;
• a first drain region that touches the first body region, the first drain region being spaced apart from the first source region, and including substantially more of the second type of impurity atoms than the first type of impurity atoms, the first middle point lying mid-way between the first source and drain regions;
• a second body region that touches the semiconductor region and lies spaced apart from the first body region, the second body region having a second channel region and a below-the-second channel region that touches and lies below the second channel region, the second channel region having a second middle point, the second channel region at the second middle point including the first type of impurity atoms, being substantially free of the second type of impurity atoms, and having an average dopant concentration that is less than the average dopant concentration of the first channel region at the first middle point, the below-the-second channel region having a dopant profile that is substantially identical to the dopant profile of the below-the-first channel region;
• a second source region that touches the second body region, the second source region including substantially more of the second type of impurity atoms than the first type of impurity atoms;
• and
• a second drain region that touches the second body region, the second drain region being spaced apart from the second source region and including substantially more of the second type of impurity atoms than the first type of impurity atoms, the second middle point lying mid-way between the second source and second drain regions.