Alternate dual damascene method for forming interconnects

A method of forming an interconnect structure comprising:

• forming at least one opening through a material stack comprising a first dielectric material layer and a sacrificial metal template layer present on the first dielectric material layer;
• forming a protective liner on sidewalls and a bottom surface of the at least one opening;
• forming a sacrificial material portion to fill the at least one opening;
• removing the sacrificial metal template layer to provide voids surrounding the sacrificial material portion;
• forming a second dielectric material layer to fill the voids;
• removing the sacrificial material portion from the at least one opening;
• removing at least a portion of the protective liner that is present on the bottom surface of the at least one opening;
• and
• forming a conductive material layer to fill the at least one opening.