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US 9,431,291 B2Granted
Method of making openings in a semiconductor device with reduced residue by transferring layers
AssigneeKabushiki Kaisha Toshiba
InventorKeisuke Nakazawa
Life of this patent
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Abstract
According to an embodiment, a method for manufacturing a semiconductor device includes transferring a continuous second layer, forming a third layer, and removing the second layer. The second layer is transferred onto a first layer. The first layer has a first opening. The second layer covers the first opening to form a first air gap. The third layer is formed on the first layer. The third layer has a second opening. The second opening is positioned on the first air gap. The second layer is removed through the second opening.
Claims9
A method for manufacturing a semiconductor device, comprising:
- transferring a continuous second layer onto a first layer, the first layer having a first opening, the second layer covering the first opening to form a first air gap;
- forming a third layer on the first layer, the third layer having a second opening, the second opening being positioned on the first air gap;
- and
- removing at least a portion of the second layer through the second opening.
1 more element
Dependencies are inferred from the claim text.