Semiconductor device and manufacturing method therefor
AssigneeFuji Electric Co., Ltd.
InventorYasushi Niimura
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Abstract
A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations.
Claims28
A method of manufacturing a semiconductor device by implementing electron beam irradiation from principal surfaces of a wafer stack formed of two or more stacked semiconductor substrates, the method comprising:
- a first irradiation step of implementing electron beam irradiation from one principal surface of the wafer stack;
- and
- a second irradiation step of implementing electron beam irradiation from the other principal surface of the wafer stack.
Dependencies are inferred from the claim text.